News Stories and Press Releases

August 8, 2017

Everspin hits the 1Gb milestone with new 28nm MRAMs

Eversping has a bunch of MRAM announcements today starting with the first Gigabit device. On top of that there are a few PCIe based accelerator boards to talk about.

SemiAccurate has always thought Everspin technology was interesting and saw a lot of potential for the products. Until today you could only get their MRAM in 256Mb capacities, enough for some applications but a bit of a psychological downer to be in the Mb class in a Gb world. Sure the tech was radically different but those numbers do make some skeptical. As we mentioned that changed with the introduction of today’s 1Gb class MRAMs. They are built on a Globalfoundries 28nm process, something SemiAccurate previously told you about, and will probably port down to the 22/20nm node soon enough.

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August 7, 2017

Gbit MRAM Debuts at Flash Summit

SANTA CLARA, Calif. – Everspin announced it is sampling a Gbit MRAM chip and will be in production this year with 1-2 Gbyte cards based on its 256 Mbit chip. The news at the Flash Memory Summithere marks a small but significant advance for a growing collection of persistent memories at an event focused on the still rising market for mainstream NAND.

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August 7, 2017

Everspin Announces Production Release of 1 and 2 Gigabyte nvNITRO NVMe SSDs

Chandler, AZ, August 7, 2017 — Everspin Technologies, Inc. (NASDAQ: MRAM), the leading provider of MRAM solutions, today announced the production release of its nvNITRO™ line of storage accelerators, designed to deliver extremely fast read and write times with ultra-low latency. Everspin is launching the initial nvNITRO accelerators with 1GB and 2GB capacities, based on 256Mb DDR3 ST-MRAM.  The storage accelerators are orderable today, and will ship in Q417.  The nvNITRO accelerators operate up to 1.5 million IOPS with 6μs end-to-end latency. Everspin is delivering a half-height, half-length (HHHL) PCIe card as well as U.2 form factors; both support NVMe and memory mapped IO (MMIO) access modes.

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August 7, 2017

Everspin Announces Sampling of the World’s First 1-Gigabit MRAM Product

Chandler, AZ, August 7, 2017 — Everspin Technologies, Inc. (NASDAQ: MRAM), has begun sampling its new 1-Gigabit Spin Torque Magnetoresistive Random Access Memory (ST-MRAM) with lead customers. This breakthrough product delivers a high-endurance, persistent memory with a DDR4- compatible interface. These features enable storage system vendors to enhance the reliability and performance of storage devices and systems by delivering protection against power loss without the use of supercapacitors or batteries. Enterprise SSD designers can take advantage of fast persistent memory that is inherently power fail-safe while also reducing write amplification and overprovisioning, common limitations for NAND Flash based SSDs. 

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August 7, 2017

Everspin Demonstrates Breakthrough Technologies at FMS 2017

Chandler, AZ, August 7, 2017 — Everspin Technologies, Inc. (NASDAQ: MRAM), will be demonstrating significant new technologies at this year’s Flash Memory Summit, August 8-10th at the Santa Clara Convention Center. At this leading event for flash memory technology, Everspin will be launching the new nvNITRO™ Storage Accelerator based on its patented ST-MRAM technology while also demonstrating new industry firsts that far surpass the current capabilities of products in the flash memory market. 

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July 25, 2017

Everspin to Announce Second Quarter 2017 Financial Results and Participate in the 37th Annual Canaccord Genuity Growth Conference on August 10, 2017

Chandler, AZ, July 25, 2017— Everspin Technologies, Inc., (Nasdaq:MRAM), the world's leading developer and manufacturer of discrete and embedded Magnetoresistive Random Access Memory (MRAM), today announced that the company will release its second quarter 2017 financial results for the quarter ending June 30, 2017 before the market opens on August 10. Everspin will also host a conference call before participating in the37th Annual Canaccord Genuity Growth Conference on the same day. 

 

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May 31, 2017

Toshiba Bidding And Other Solid State Storage Developments

There are many developments on flash memory to discuss, including the latest developments in the Toshiba NAND flash fab bidding, a new SSD from WD and Seagate’s solid-state hard drive (SSHD) for high performance enterprise applications. In addition, MRAM growth as an emerging solid-state memory is evident in Everspin’s quarterly announcements as well as announcements and talks from Samsung and TDK.

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May 22, 2017

Everspin to participate in two investor conferences in June

Chandler, AZ, May 22, 2017— Everspin Technologies, Inc., (Nasdaq:MRAM), the world's leading developer and manufacturer of discrete and embedded Magnetoresistive Random Access Memory (MRAM), today announced that the company will participate in two investor conferences in June:

  • Stifel 2017 Technology, Internet & Media Conference in San Francisco on June 5
  • Needham’s Inaugural Automotive Tech Day in New York City on June 6

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May 22, 2017

Impinj and Everspin Memory Chips Could Be the Next Big Thing

In the world of computer chips, all glory goes to the microprocessor, and especially to the kind that Intel sells, which serves as the brains of your personal computer.

But there are many other kinds of chips in the universe of semiconductors, some increasingly more important.

This magazine argued in a 2015 cover story that memory...

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May 12, 2017

Everspin Announces First Quarter 2017 Financial Results

Chandler, AZ, May 12, 2017— Everspin Technologies, Inc., (Nasdaq:MRAM), the world's leading developer and manufacturer of discrete and embedded Magnetoresistive Random Access Memory (MRAM), today announced the financial results for its first quarter ended March 31, 2017. 

 

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